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| SI9410DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = 10 V 30 0.040 @ VGS = 5 V 0.050 @ VGS = 4.5 V ID (A) "7.0 "6.0 "5.4 DDDD SO-8 N/C S S G 1 2 3 4 Top View S S 8 7 6 5 D D D D G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 "7.0 "5.8 "30 2.8 2.5 Unit V A W 1.6 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70122 S-00652--Rev. L, 27-Mar-00 Printed from www.freetradezone.com, a service of Partminer, Inc. Symbol RthJA Limit 50 Unit _C/W www.vishay.com S FaxBack 408-970-5600 1 This Material Copyrighted by Its Respective Manufacturer SI9410DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID =7.0 A Drain-Source On-State Resistanceb DiS OS Ri rDS(on) VGS = 5 V, ID = 4.0 A VGS = 4.5 V, ID = 3.5 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 15 V, ID = 7.0 A IS = 2 A, VGS = 0 V 30 0.024 0.030 0.032 15 0.72 1.1 0.030 0.040 0.050 S V W 1.0 "100 2 25 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2 A, di/dt = 100 A/ms VDD = 25 V, RL = 25 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 15 V, VGS = 10 V ID = 2 A V V, 24 2.8 4.6 14 10 46 17 60 30 60 150 140 ns 50 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Printed from www.freetradezone.com, a service of Partminer, Inc. Document Number: 70122 S-00652--Rev. L, 27-Mar-00 This Material Copyrighted by Its Respective Manufacturer SI9410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10, 9, 8, 7, 6, 5 V 25 4V I D - Drain Current (A) 25 30 Transfer Characteristics I D - Drain Current (A) 20 20 15 15 10 3V 10 TC = 125_C 5 2V 0 0 2 4 6 8 10 5 25_C -55_C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.06 2400 Capacitance 0.05 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 2000 0.04 VGS = 4.5 V 0.03 1600 Ciss 1200 0.02 10 V 800 Coss Crss 0.01 400 0 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 7 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7 A V GS - Gate-to-Source Voltage (V) 6 r DS(on) - On-Resistance ( W ) (Normalized) 0 5 10 15 20 25 8 1.6 1.2 4 0.8 2 0.4 0 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70122 S-00652--Rev. L, 27-Mar-00 Printed from www.freetradezone.com, a service of Partminer, Inc. www.vishay.com S FaxBack 408-970-5600 3 This Material Copyrighted by Its Respective Manufacturer SI9410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 Source-Drain Diode Forward Voltage 0.30 On-Resistance vs. Gate-to-Source Voltage 0.25 I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) ID = 3.2 A 0.20 0.15 25_C 0.10 0.05 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 70 60 50 Single Pulse Power V GS(th) Variance (V) 0.0 Power (W) -0.4 20 10 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 0.2 Notes: 40 30 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Printed from www.freetradezone.com, a service of Partminer, Inc. Document Number: 70122 S-00652--Rev. L, 27-Mar-00 This Material Copyrighted by Its Respective Manufacturer |
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